Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach
نویسندگان
چکیده
Article history: Received 27 May 2015 Received in revised form 17 June 2015 Accepted 18 June 2015 Available online xxxx
منابع مشابه
Electrical Characterization of Resistive Switching Memories
Metal oxide based resistive switching memories, also known as resistive-RAM (RRAM), have shown promising characteristics for next-generation nonvolatile memory and reconfigurable logic applications. These devices can be electrically switched between a low-resistance-state (LRS) and high-resistance-state (HRS) over many cycles. Fig. 1(a) illustrates the resistive switching terminologies and the ...
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عنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015